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 2N5715

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Bipolar NPN UHF-Microwave Transisitor
V(BR)CEO (V)=30
V(BR)CBO (V)=50
I(C) Abs.(A) Collector Current=200m
Absolute Max. Power Diss. (W)=6.0
I(CBO) Max. (A)=500u
@V(CBO) (V) (Test Condition)=45
h(FE) Min. Static Current Gain=20
h(FE) Max. Current gain.=200
@I(C) (A) (Test Condition)=50m
@V(CE) (V) (Test Condition)=5.0
f(T) Min. (Hz) Transition Freq=3.5G
@I(C) (A) (Test Condition)=50m
@V(CE) (V) (Test Condition)=10
Power Gain Min. (dB)=9.0
@I(C) (A) (Test Condition)=52m
@V(CE) (V) (Test Condition)=28
@Freq. (Hz) (Test Condition)=2.0G
Semiconductor Material=Silicon
C(obo) (Max) (F)=1.8p
@Freq. (Hz) (Test Condition)=1.0M
Package=TO-129
Military=N